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| LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR 2 BASE BCW29LT1 BCW30LT1 3 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO 1 EMITTER Value -32 -32 -5.0 -100 Unit Vdc 2 Vdc Vdc mAdc CASE 318-08, STYLE 6 SOT-23 (TO-236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ , Tstg 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C DEVICE MARKING BCW29LT1 = C1; BCW30LT1 = C2 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -2.0mAdc, IE = 0 ) Collector-Emitter Breakdown Voltage (I C = -100 Adc, V EB = 0) Collector-Emitter Breakdown Voltage (I C = -10 Adc, I C = 0) Emitter-Base Breakdown Voltage (I E = -10 Adc, I C = 0) Collector Cutoff Current (VCB = -32 Vdc, IE = 0 ) (VCB = -32 Vdc, IE = 0, TA = 100C) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)EBO V (BR)CEO -32 -- Vdc V (BR)CES -32 -- Vdc V (BR)CBO -32 -- Vdc -5.0 -- Vdc I CBO -- -- -100 -10 nAdc Adc M7-1/6 LESHAN RADIO COMPANY, LTD. BCW29LT1 BCW30LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain ( IC= - 2.0 mAdc, VCE = - 5.0 Vdc ) Collector-Emitter Saturation Voltage ( IC = - 10 mAdc, IB = - 0.5 mAdc ) Base-Emitter On Voltage ( IC = - 2.0 mAdc, VCE = - 5.0 Vdc ) hFE BCW29 BCW30 V CE(sat) 120 215 -- 260 500 - 0.3 -- -- Vdc V BE(on) - 0.6 -0.75 Vdc SMALL-SIGNAL CHARACTERISTICS Output Capacitance ( VCB = - 10 Vdc,IE= 0, f = 1.0 MHz) Noise Figure C obo -- -- 7.0 10 pF dB NF ( I C = - 0.2 mAdc, V CE = -5.0 Vdc, R S = 2.0 k, f = 1.0 kHz, BW = 200 Hz ) M7-2/6 LESHAN RADIO COMPANY, LTD. BCW29LT1 BCW30LT1 TYPICAL NOISE CHARACTERISTICS (V CE = - 5.0 Vdc, T A = 25C) 10 BANDWIDTH = 1.0 Hz R ~0 ~ 10.0 7.0 BANDWIDTH = 1.0 Hz R S~ ~ e n , NOISE VOLTAGE (nV) IC=10 A 5.0 I n , NOISE CURRENT (pA) 7.0 S 5.0 3.0 2.0 IC=1.0mA 300A 30A 3.0 100A 1.0mA 300A 1.0 0.7 0.5 0.3 0.2 100A 30A 10A 2.0 1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 0.1 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 1. Noise Voltage Figure 2. Noise Current NOISE FIGURE CONTOURS (V CE = - 5.0 Vdc, T A = 25C) 1.0M 500k BANDWIDTH = 1.0 Hz 1.0M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 R S , SOURCE RESISTANCE ( ) R S , SOURCE RESISTANCE ( ) 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 20 30 50 70 100 200 300 500 700 1.0K 0.5 dB 1.0 dB 2.0dB 3.0 dB 5.0 dB 20 30 50 70 100 200 300 500 700 1.0K 0.5 dB 1.0dB 2.0 dB 3.0 dB 5.0 dB 200 100 10 I C , COLLECTOR CURRENT (A) I C , COLLECTOR CURRENT (A) Figure 3. Narrow Band, 100 Hz 1.0M 500k 10 Hz to 15.7KHz Figure 4. Narrow Band, 1.0 kHz R S , SOURCE RESISTANCE ( ) 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 20 30 50 70 100 200 300 Noise Figure is Defined as: NF = 20 log 10 ( ---------------) 4KTR S e n 2 + 4KTRS + I n2 R S2 1/ 2 0.5dB 1.0dB 2.0dB 3.0 dB 5.0 dB 500 700 1.0K e n = Noise Voltage of the Transistor referred to the input. (Figure 3) I n = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10 -23 j/K) T = Temperature of the Source Resistance (K) R s = Source Resistance ( ) I C , COLLECTOR CURRENT (A) Figure 5. Wideband 8 M7-3/6 LESHAN RADIO COMPANY, LTD. BCW29LT1 BCW30LT1 TYPICAL STATIC CHARACTERISTICS 400 T J = 125C hFE , DC CURRENT GAIN 200 25C - 55C 100 80 60 BCW29LT1 V CE= 1.0 V V CE= 10 V 0.01 0.020.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 40 0.003 0.005 I C , COLLECTOR CURRENT (mA) Figure 6. DC Current Gain V CE , COLLECTOR- EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) 1.0 100 0.8 T A= 25C BCW29LT1 I C= 1.0 mA 10 mA 50 mA 100 mA 80 T A = 25C PULSE WIDTH =300 ms DUTY CYCLE<2.0% 300A I B= 400 mA 350A 250 A 200 A 150 A 0.6 60 0.4 40 100 A 50A 0.2 20 0 0.002 0.0050.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 0 5.0 10 15 20 25 30 35 40 I B , BASE CURRENT (mA) V , TEMPERATURE COEFFICIENTS (mV/C) V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Collector Saturation Region 1.4 Figure 8. Collector Characteristics 1.6 T J=25C 1.2 *APPLIES for I C / I B < h FE / 2 0.8 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VC for V CE(sat) 0 25C to 125C -55C to 25C V BE(sat) @ I C /I B = 10 V BE(on)@ V CE= 1.0 V -0.8 25C to 125C VB for V BE -55C to 25C 0.4 0.2 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 -1.6 V CE(sat) @ I C /I B = 10 -2.4 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 9. "On" Voltages Figure 10. Temperature Coefficients M7-4/6 LESHAN RADIO COMPANY, LTD. BCW29LT1 BCW30LT1 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 1000 V CC= 3.0 V IC /I B= 10 T J= 25C t, TIME (ns) 700 500 300 200 100 70 50 30 20 10 ts VCC= -3.0 V IC /I B= 10 IB1=IB2 T J= 25C t, TIME (ns) 100 70 50 30 20 tr td @ V BE(off)= 0.5 V tf 10 7.0 5.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 I C , COLLECTOR CURRENT (mA) f T, CURRENT- GAIN -- BANDWIDTH PRODUCT (MHz) I C , COLLECTOR CURRENT (mA) Figure 11. Turn-On Time 500 10.0 Figure 12. Turn-Off Time T J = 25C C, CAPACITANCE (pF) 300 T J= 25C V CE=20 V 5.0 V 7.0 C ib 5.0 200 3.0 100 2.0 C ob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I C , COLLECTOR CURRENT (mA) V R , REVERSE VOLTAGE (VOLTS) Figure 13. Current-Gain -- Bandwidth Product 20 Figure 14. Capacitance h ie , INPUT IMPEDANCE ( k ) 10 7.0 5.0 3.0 2.0 BCW29LT1 h fe ~ 200 ~ @ I C= -1.0 mA VCE= 10 Vdc f = 1.0 kHz T A = 25C hoe , OUTPUT ADMITTANCE ( mhos ) 200 100 70 50 VCE= 10 Vdc f = 1.0 kHz T A= 25C BCW29LT1 h fe ~ 200 ~ @ I C= 1.0 mA 30 20 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. Input Impedance Figure 18. Output Admittance M7-5/6 LESHAN RADIO COMPANY, LTD. BCW29LT1 BCW30LT1 r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 FIGURE 19 0.05 0.02 P(pk) t SINGLE PULSE 1 0.1 0.07 0.05 0.03 DUTY CYCLE, D = t 1 / t 2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 (SEE AN-569) Z JA(t) = r(t) * RJA 0.01 0.02 0.01 0.01 t 2 T J(pk) - T A = P (pk) Z JA(t) 1.0k 2.0k 5.0k 10k 20k 50k 100k 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 t, TIME (ms) Figure 17. Thermal Response 104 V CC = 30 V 10 3 DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find Z JA(t) , multiply the value obtained from Figure 17 by the steady state value R JA . Example: The BCW29LT1 is dissipating 2.0 watts peak under the following conditions: t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2) Using Figure 17at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P (pk) x R JA = 0.22 x 2.0 x 200 = 88C. For more information, see AN-569. I C , COLLECTOR CURRENT (nA) I CEO 102 101 I CBO AND I CEX @ V BE(off) = 3.0 V 100 10-1 10-2 -4 -2 0 +20 +40 +60 +80 +100 +120 +140 +160 T J , JUNCTION TEMPERATURE (C) Figure 18. Typical Collector Leakage Current M7-6/6 |
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